蚀刻机的原理
Principle of etcher
感应耦合等离子体刻蚀法（InducTIvely CoupledPlasma Etch，简称ICPE）是化学过程和物理过程共同作用的结果。它的基本原理是在真空低气压下，ICP 射频电源产生的射频输出到环形耦合线圈，以一定比例的混合刻蚀气体经耦合辉光放电，产生高密度的等离子体，在下电极的RF 射频作用下，这些等离子体对基片表面进行轰击，基片图形区域的半导体材料的化学键被打断，与刻蚀气体生成挥发性物质，以气体形式脱离基片，然后从真空管路被抽走。
Inductively coupled plasma etch (ICPE) is the result of the interaction of chemical and physical processes. Its basic principle is that under vacuum and low pressure, the RF generated by ICP RF power supply is output to the ring coupling coil, and a certain proportion of mixed etching gas is discharged through coupling glow to generate high-density plasma. Under the RF action of the lower electrode, these plasmas bombard the substrate surface, the chemical bond of semiconductor materials in the substrate pattern area is broken, and volatile substances are generated with the etching gas, It is separated from the substrate in the form of gas and then pumped away from the vacuum line.